
Step 1: Analyze Statement A
For a solar cell, the I − V characteristics lie in the fourth quadrant because it operates by converting light energy into electrical energy, generating current in the process. This makes Statement A correct.
Step 2: Analyze Statement B
In a reverse-biased pn-junction diode, the current (leakage current) is due to minority carriers, not majority carriers. Hence, Statement B is incorrect.
Step 3: Conclusion
Statement A is correct, but Statement B is incorrect.

The following are the graphs of potential barrier versus width of the depletion region for a p-n junction diode. 
Which of the following is correct?
The output (Y) of the given logic implementation is similar to the output of an/a …………. gate.