List of top Physics Questions on P-N Junction asked in NEET (UG)

Consider the following statements A and B and identify the correct answer:

A. For a solar-cell, the I-V characteristics lies in the IV quadrant of the given graph.
B. In a reverse biased pn junction diode, the current measured in (µA), is due to majority charge carriers.

A set of ‘n’ equal resistors, of value ‘R’ each, are connected in series to a battery of emf ‘E’ and internal resistance ‘R’. The current drawn is I. Now, the ‘n’ resistors are connected in parallel to the same battery. Then the current drawn from battery becomes 10 I. The value of ‘n’ is

In a p-n junction diode, change in temperature due to heating

The input signal given to a CE amplifier having a voltage gain of 150 is $v_i = 2 \cos \Bigg(15t+\frac{\pi}{3}\Bigg)$ The corresponding output signal will be

The barrier potential of a $p-n$ junction depends on (1) type of semiconductor material (2) amount of doping (3) temperature Which one of the following is correct?

Pure $Si$ at $500\, K$ has equal number of electron $(n_e)$ and hole $(n_h)$ concentrations of $1.5 \times 10^{16}\, m^{-3}$ Doping by indium increases $n_h$ to 4.5 $\times 10^{22}\, m^{-3}$ The doped semiconductor is of

The depletion layer in the p-n junction region is caused by