Question:

In the circuit shown if the potential drop in forward bias across Si and Ge diodes are 0.7 V and 0.3 V, find the potential difference across 2.5 k resistor
Si and Ge diodes

Updated On: Jun 15, 2024
  • 9.25 V
  • 6.25 V
  • 8.75 V
  • 9.75 V
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The Correct Option is C

Solution and Explanation

The correct option is (C) : 8.75 V
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Concepts Used:

P-n Junction

A P-N junction is an interface or a boundary between two semiconductor material types, namely the p-type and the n-type, inside a semiconductor.

Biasing conditions for the p-n Junction Diode:

in p-n junction diode two operating regions are there:

  • P-type
  • N-type

There are three biasing conditions for p-n junction diode are as follows:

  • Zero bias: When there is no external voltage applied to the p-n junction diode.
  • Forward bias: P-type is connected to positive terminal of the voltage potential while n-type is connected to the negative terminal.
  • Reverse bias: P-type is connected to negative terminal of the voltage potential while n-type is connected to the positive terminal.