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Nanoelectronics
List of top Nanoelectronics Questions on Electronic devices
Which property refers to the inability to repeat recorded data when scanning from different directions?
CUET (PG) - 2026
CUET (PG)
Nanoelectronics
Electronic devices
What is the word length of a standard 8085 microprocessor?
CUET (PG) - 2026
CUET (PG)
Nanoelectronics
Electronic devices
Determine the Y11 and Y12 parameters for the circuit given below:
CUET (PG) - 2025
CUET (PG)
Nanoelectronics
Electronic devices
Match List-I with List-II:
List-I (Amplifiers)
List-II (Characteristics)
(A) CE Amplifier
(I) Current buffer circuit
(B) CB Amplifier
(II) Voltage buffer circuit
(C) CC Amplifier
(III) High current gain
(D) Darlington Amplifier
(IV) High power gain
Choose the correct answer:
CUET (PG) - 2025
CUET (PG)
Nanoelectronics
Electronic devices
The consequences of Early effect on BJT are:
(A) Effective base width reduces.
(B) Emitter injection efficiency and base transport factor increase.
(C) $\alpha$ and $\beta$ decrease.
(D) Emitter injection efficiency and base transport factor decrease.
Choose the correct answer:
CUET (PG) - 2025
CUET (PG)
Nanoelectronics
Electronic devices
The DC collector current for a BJT with $\alpha = 0.99$, $I_B = 25 \, \mu A$ and $I_{CBO} = 200 \, nA$ is:
CUET (PG) - 2025
CUET (PG)
Nanoelectronics
Electronic devices
(A) Tunnel diode is a heavily doped pn junction diode that exhibits negative differential resistance.
(B) Stability factor (S) is the maximum for a voltage divider bias circuit.
(C) The operational amplifier works as a comparator circuit in open loop configuration.
(D) Biasing is done to set the quiescent point of the transistor in the middle of the DC load line.
Choose the correct statements from the options given below:
CUET (PG) - 2025
CUET (PG)
Nanoelectronics
Electronic devices
Arrange the following devices in increasing order of their input resistances:
(A) MOSFET
(B) BJT
(C) JFET
(D) PN junction diode
CUET (PG) - 2025
CUET (PG)
Nanoelectronics
Electronic devices
Match List-I with List-II:
List-I (Effects)
List-II (Electronic Devices)
(A) Channel length modulation
(I) Zener diode
(B) Channel width modulation
(II) BJTs
(C) Early effect
(III) JFETs
(D) Tunneling effect
(IV) MOSFETs
Choose the correct answer:
CUET (PG) - 2025
CUET (PG)
Nanoelectronics
Electronic devices
Following statements are given in reference to 8085 Microprocessor:
(A) Its memory size is 64 KB
(B) It is a 40-pin IC
(C) Its clock frequency lies between 3 to 5 MHz
(D) It has 16 bit of each data and address lines.
Choose the correct answer from the options given below:
CUET (PG) - 2025
CUET (PG)
Nanoelectronics
Electronic devices
Match List-I with List-II
List-I (Instructions)
List-II (Addressing Mode)
(A) LDA 2100 H
(I) Immediate
(B) RAL
(II) Register
(C) ADD C
(III) Direct
(D) ANI 08 H
(IV) Implied
CUET (PG) - 2025
CUET (PG)
Nanoelectronics
Electronic devices
(A) MOV A, C is a one-byte instruction.
(B) OUT 03 H is a two-byte instruction.
(C) ANI 76 H is a three-byte instruction.
(D) STA 3000 H is a three-byte instruction.
CUET (PG) - 2025
CUET (PG)
Nanoelectronics
Electronic devices
Match List-I with List-II
List-I (Data Bus Status Output)
List-II (Status Signals)
(A) Memory read
(I) 0, 1, 1
(B) Op-code fetch
(II) 0, 1, 0
(C) INTR acknowledge
(III) 0, 0, 1
(D) Memory write
(IV) 1, 1, 1
CUET (PG) - 2025
CUET (PG)
Nanoelectronics
Electronic devices
............ refers to the inability to faithfully repeat recorded data output when measuring a range of values and scanning from different directions.
CUET (PG) - 2025
CUET (PG)
Nanoelectronics
Electronic devices
........ is the vector address of the TRAP interrupt.
CUET (PG) - 2025
CUET (PG)
Nanoelectronics
Electronic devices
What is the word length of an 8-bit microprocessor?
CUET (PG) - 2025
CUET (PG)
Nanoelectronics
Electronic devices