Question

Match List-I with List-II:

List-I (Effects)	List-II (Electronic Devices)
(A) Channel length modulation	(I) Zener diode
(B) Channel width modulation	(II) BJTs
(C) Early effect	(III) JFETs
(D) Tunneling effect	(IV) MOSFETs

Choose the correct answer:

• (A) – (I), (B) – (II), (C) – (III), (D) – (IV)
• (A) – (IV), (B) – (II), (C) – (III), (D) – (I)
• (A) – (II), (B) – (III), (C) – (IV), (D) – (I)
• (A) – (III), (B) – (IV), (C) – (II), (D) – (I)

Hint:

Understand the physics behind each effect in the context of different devices for accurate matching.

Answer 1

The Correct Option is D

- Channel length modulation is associated with MOSFETs.
- Channel width modulation is related to BJTs.
- Early effect is observed in BJTs.
- Tunneling effect occurs in MOSFETs.

Final Answer: \[ \boxed{(4)} \]