List of top Physics Questions on Semiconductor electronics: materials, devices and simple circuits asked in KCET

A wafer of pure germanium crystal has two parts X and Y. The end X is obtained by doping with arsenic and Y with indium. It is connected to a battery as shown in the figure. Which of the following statements is correct?
In which of the following figures, diode is reverse biased?
An n-type and p-type semiconductor can be obtained by respectively doping pure silicon with
The range of electrical conductivity \( \sigma \) and resistivity \( \rho \) for metals, among the following, is:
When a p-n junction diode is in forward bias, which type of charge carriers flows in the connecting wire?
The energy gap of an LED is 2.4 eV. When the LED is switched ‘ON’, the momentum of the emitted photons is
Three phtodiodes D1, D2, D3 are made of semiconductors having band gaps of 2.5 eV, 2 eV and 3 eV respectively. Which one will be able to detect light of wavelength 600 nm?
A positive hole in a semiconductor is
The conductivity of semiconductor increases with increase in temperature because
In the following circuit, what are P and Q?
The density of an electron-hole pair in a pure germanium is $3 \times 10^{16} \, m^{-3}$ at room temperature. On doping with aluminium, the hole density increases to $4.5 \times 10^{22} \, m^{-3}$. Now the electron density (in $m^{-3}$) in doped germanium will be
An $LED$ is constructed from a $pn$ junction based on a certain semi-conducting material whose energy gap is $1.9\, eV$. Then the wavelength of the emitted light is
The forbidden energy gap in $Ge$ is $0.72\, eV$. Given, $hc = 12400 \, eV \, - ?$ . The maximum wavelength of radiation that will generate an electron hole pair is
In a p-n junction diode notconnected to any circuit
Identify the logic operation performed by the circuit given here.
The principle of $LASER$ action involves
Minority carriers in a $p-type$ semiconductor are
In a reverse biased diode when the applied voltage changes by $1\, V$, the current is found to change by $0.5\, \mu\,A$ . The reverse bias resistance of the diode is
At $0\, K$ temperature, a $p$ - type semiconductor