Step 1: Understand the p-n junction under forward bias.
In a p-n junction diode, a potential barrier exists at the junction due to the separation of charges, creating a depletion layer where mobile charge carriers are absent. The potential barrier height is typically around 0.7 V for silicon diodes at equilibrium (no bias).
Step 2: Analyze the effect of forward bias.
When a p-n junction is forward biased, the positive terminal of the external voltage is connected to the p-side, and the negative terminal to the n-side. This reduces the electric field opposing the diffusion of majority carriers:
- The applied voltage opposes the built-in potential barrier, effectively reducing the potential barrier height.
- As the potential barrier decreases, the electric field across the depletion region weakens, allowing majority carriers (electrons from the n-side and holes from the p-side) to diffuse across the junction more easily.
Step 3: Determine the effect on the depletion layer width.
The width of the depletion layer is related to the electric field and the potential barrier. In forward bias:
- The reduction in the potential barrier reduces the electric field across the junction.
- This causes the depletion layer to shrink, as the space charge region narrows due to the increased diffusion of carriers.
Step 4: Summarize the effects.
- The potential barrier height decreases because the forward bias opposes the built-in potential.
- The width of the depletion layer decreases because the reduced electric field allows the depletion region to contract.
Step 5: Match with the options.
Both the potential barrier height and the width of the depletion layer decrease, which matches option (A).