An intrinsic semiconductor of band gap 1.25 eV has an electron concentration \( 10^{10} \, \text{cm}^{-3} \) at 300 K. Assume that its band gap is independent of temperature and that the electron concentration depends only exponentially on the temperature. If the electron concentration at 200 K is \( Y \times 10^N \, \text{cm}^{-3} \) (where \( 1<Y<10 \), \( N \) = integer), then the value of \( N \) is:
