List of top Physics Questions on Transistors

In amplitude modulation, if a message signal of 5 kHz is modulated by a carrier wave of frequency 900 kHz, then the frequencies of the side bands are
In a common emitter transistor amplifier the resistance of collector is 3 kΩ. If the current amplification factor is 100 and the base resistance is 2 kΩ, then the power gain of the transistor is
The logic gate equivalent to the circuit shown in the figure is:
The logic gate equivalent
The device used for voltage regulation is
The logic gate equivalent to the circuit shown in the figure is:
The logic gate equivalent
The device used for voltage regulation is
If five logic gates are connected as shown in the figure, then the values of $y_1$, $y_2$, and $y_3$ are respectively
logic gates
The voltage gains of two amplifiers connected in series are 8 and 12.5. If the voltage of the input signal is 200 \(\mu V\), then the voltage of the output signal is
In an \( npn \) transistor circuit, the collector current is \( 10 \) mA. If \( 95\% \) of the electrons emitted reach the collector, then the base current is nearly:
The current gain of a transistor in a common emitter configuration is 80. The resistances in collector and base sides of the circuit are 5 k$\omega$ and 1 k$\omega$ respectively. If the input voltage is 2 mV, the output voltage is:
The voltage gain of a transistor in common emitter configuration is 160. The resistances in base and collector sides of the circuit are 1k\( \Omega \) and 4k\( \Omega \), respectively. If the change in base current is 100\( \mu \)A, then the change in output current is
If \( R_C \) and \( R_B \) are respectively the resistances of in collector and base sides of the circuit, and \( \beta \) is the current amplification factor, then the voltage gain of a transistor amplifier in common emitter configuration is:

The following orbital energies (\(E\)) are compared. Identify the correct sets 

(I) E2(H) = E2(H)
(II) E3(H) = E3(He)
(III) E2s(H) < E2s(He)
(IV) E3s(He) < E3s(H)

The current gain of a transistor in common emitter configuration is 45. If the resistances in collector and base sides of the circuit are 4.5 kΩ and 900 Ω, the voltage gain of the amplifier is:
The power gain of a transistor operating in common emitter configuration is 32,000. If the input and output resistances of the circuit are 1200 \( \Omega \) and 6000 \( \Omega \) respectively, then the current gain is:

Define the current gain \( \alpha_{DC} \) and \( \beta_{DC} \) for a transistor. Obtain the relation between them.

The typical biasing of a silicon transistor is shown in the figure.
biasing of a silicon transistor
The value of the common-emitter current gain \( \beta \) for the transistor is 100. Ignore reverse saturation current. The output voltage \( V_o \) (in V) is ____ (in integer).
In a p-n-p transistor,
In a transistor, when the emitter current changes by 9.85 mA, the collector current changes to 9.5 mA. Then the base current is
In a transistor amplifier used in CE configuration, the phase difference between input voltage and output voltage is:
In a transistor circuit, if emitter and collector connections are interchanged then
For a CE transistor amplifier, the current amplification factor is 59 and the emitter current is 6.6 mA. Then the base current is
A transistor is connected in CE configuration. The collector supply is 10 V and the voltage drop across a resistor of 1000 $ \Omega $ in the collector circuit is 0.5 V. If the current gain factor is 0.96, then the base current is

Given below are two statements :
Statement I : In a typical transistor, all three regions emitter, base and collector have same doping level.
Statement II : In a transistor, collector is the thickest and base is the thinnest segment.
In the light of the above statements, choose the most appropriate answer from the options given below.

Equipotential surfaces are shown in the figure. The electric field strength will be: