List of top Physics Questions on Semiconductor electronics: materials, devices and simple circuits asked in AIIMS

Given below are two statements, one is labelled as Assertion A and the other is labelled as Reason R

Assertion (A) : Photodiode and solar cell work on the same principle. 

Reason (R) : Area is large for solar cell.

In the light of the above statements, choose the correct answer from the options given below

Gallium arsenide phosphide is used for making LED. Valance band overlaps with conduction band in case of semionductor.
An n-type semiconductor has a large number of electrons but still it is electrically neutral. An n-type semiconductor is obtained by doping an intrinsic semiconductor with a pentavalent impurity.
A transistor connected at common emitter mode contains load resistance of 5 k$\Omega$ and an input resistance of 1 k$\Omega$. If the input peak voltage is 5 mV and the current gain is 50, find the voltage gain.
In a common emitter transistor amplifier, the input current is much less than the output current than output impedance. The common emitter transistor amplifier has higher input impedance than output impedance
A semiconductor having electron and hole mobilities $\mu_{n}$ and $\mu_{p}$ respectively. if its intrinsic carrier density is $n_{i}$, then what will be the value of hole concentration $P$ for which the conductivity will be minimum at a given temperature?
The Boolean expression $P+\bar{P} Q$, where $P$ and $Q$ are the inputs of the logic circuit, represents
In an intrinsic semiconductor band gap is $1.2\, eV$ then ratio of number of charge carriers at $600\, K$ and $300\, K$ is
Direction of electric field in P-N junction diode is
Zener diode acts as a/an
NAND is a universal gate. It can be used to describe all other logic gates.
An amplifier has a voltage gain $A_{v}=1000$. The voltage gain in $dB$ is :
When a $p-n$ junction diode is reverse biased, then
Which of the following logic gates is a universal gate?
In a semiconducting material the mobilities of electrons and holes are $\mu_{e}$ and $\mu_{h}$ respectively. Which of the following its true?
In the following common emitter configuration an $n p n$ transistor with current gain $\beta=100$ is used. The output voltage of the amplificr will be
The resistivity of a semiconductor increases with temperature. The atoms of a semiconductor vibrate with large amplitude at higher temperatures there by increasing its resistivity.
The potential barrier, in the depletion layer, is due to
What accounts for the flow of charge carriers in forward and reverse biasing of silicon p - n diode?
Diode is used as a/an
Boolean algebra is essentially based on
In n-type semiconductors, majority charge carriers are
In some substances, charge can flow at ordinary temperature, but not at very low temperatures. These substances are called
In a pure semiconductor crystal, if current flows due to breakage of crystal bonds, then the semiconductor, is called
Plate current will be maximum, when