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Question:
The depletion layer in the $p-n$ junction region is caused by
The depletion layer in the $p-n$ junction region is caused by
Updated On: Jun 14, 2022
- drift of holes
- diffusion of charge carriers
- migration of impurity ions
- drift of electrons
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The Correct Option is B
Solution and Explanation
When a $p$ - $n$ junction is formed, some of the free electrons in the $n$ region diffuses across the junction and combine with holes to form negative ions. In doing so they leave behind positive ions at the donor impurity sites. Similarly, holes from p side diffuse to the $n$ side and thus form a layer called diffusion layer at the junction. So the depletion region is caused by the diffusion of charge carriers.
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Concepts Used:
P-n Junction
A P-N junction is an interface or a boundary between two semiconductor material types, namely the p-type and the n-type, inside a semiconductor.
Biasing conditions for the p-n Junction Diode:
in p-n junction diode two operating regions are there:
- P-type
- N-type
There are three biasing conditions for p-n junction diode are as follows:
- Zero bias: When there is no external voltage applied to the p-n junction diode.
- Forward bias: P-type is connected to positive terminal of the voltage potential while n-type is connected to the negative terminal.
- Reverse bias: P-type is connected to negative terminal of the voltage potential while n-type is connected to the positive terminal.
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