For a forward biased p-n junction diode, which one of the following energy-band diagrams is correct? (\( \epsilon_F \) is the Fermi energy) 

At a particular temperature T, Planck's energy density of black body radiation in terms of frequency is \(\rho_T(\nu) = 8 \times 10^{-18} \text{ J/m}^3 \text{ Hz}^{-1}\) at \(\nu = 3 \times 10^{14}\) Hz. Then Planck's energy density \(\rho_T(\lambda)\) at the corresponding wavelength (\(\lambda\)) has the value \rule{1cm}{0.15mm} \(\times 10^2 \text{ J/m}^4\). (in integer)
[Speed of light \(c = 3 \times 10^8\) m/s]
(Note: The unit for \(\rho_T(\nu)\) in the original problem was given as J/m³, which is dimensionally incorrect for a spectral density. The correct unit J/(m³·Hz) or J·s/m³ is used here for the solution.)
A semiconductor \( pn \) junction at thermal equilibrium has the space charge density \( \rho(x) \) profile as shown in the figure. The figure that best depicts the variation of the electric field \( E \) with \( x \) is ( \( W \) denotes the width of the depletion layer): 
For a semiconductor material, the conventional flat band energy diagram is shown in the figure. The variables Y, X respectively are: 
