List of top Physics Questions on Solid State Physics, Devices, Electronics asked in IIT JAM PH

The ratio of the density of atoms between the (111) and (110) planes in a simple cubic (sc) lattice is ____. (up to two decimal places)

The packing fraction for a two-dimensional hexagonal lattice having sides 2r with atoms of radii r placed at each vertex and at the center is _____. (up to two decimal places)

In an orthorhombic crystal, the lattice constants are 3.0 \AA, 3.2 \AA, and 4.0 \AA. The distance $d_{101}$ between the successive (101) planes is \rule{1cm{0.15mm} \AA. (up to one decimal place)}

An ideal p-n junction diode (ideality factor $\eta = 1$) is operating in forward bias at room temperature (thermal energy = 26 meV). If the diode current is 26 mA for an applied bias of 1.0 V, the dynamic resistance ($r_{ac}$) is \rule{1cm{0.15mm} $\Omega$. (up to two decimal places)}

For a body centered cubic (bcc) system, the x-ray diffraction peaks are observed for the following $h^2+k^2+l^2$ value(s)

Which of these cubic lattice plane pairs is(are) perpendicular to each other?

In the following OP-AMP circuit, 𝑣_𝑖𝑛 and 𝑣_𝑜𝑢𝑡 represent the input and output signals, respectively.

Choose the correct statement(s):

A transistor (β=100, 𝑉𝐵𝐸 = 0.7𝑉) is connected as shown in the circuit below.

The current IC will be mA. (Rounded off to two decimal places)

A Zener diode (rating 10V, 2W) and a normal diode (turn-on voltage 0.7V) are connected in a circuit as shown in the figure. The voltage drop 𝑉_𝐿 across the 2kΩ resistance is ____V. (Rounded off to one decimal place)

A charge of −9C is placed at the center of a concentric spherical shell made of a linear dielectric material (relative permittivity 9) and having inner and outer radii of 0.1m and 0.2m, respectively. The total charge induced on its inner surface is ______C. (Rounded off to two decimal place)

Consider a p-n junction diode which has 10²³ acceptor-atoms/m³ in the p-side and 10²² donor-atoms/m³ in the n-side. If the depletion width in the p-side is 0.16µm, then the value of depletion width in the n-side will be ______µm. (Rounded off to one decimal place)

For the LCR AC-circuit (resonance frequency ω_o) shown in the figure below, choose the correct statement(s).

A pure Si crystal can be converted to an n-type crystal by doping with

Consider the following logic circuit.

The output Y is LOW when:

In an extrinsic p-type semiconductor, which of the following schematic diagram depicts the variation of the Fermi energy level (E_F) with temperature (T) ?

For an ideal intrinsic semiconductor, the Fermi energy at 0 K

For the given circuit, R = 125 Ω, R_L = 470 Ω, V_z = 9V, and $I_z^{max}$= 65 mA. The minimum and maximum values of the input voltage ($V_i^{min}\ and\ V_i^{max}$) for which the Zener diode will be in the 'ON' state are

For an n-type silicon, an extrinsic semiconductor, the natural logarithm of normalized conductivity (σ) is plotted as a function of inverse temperature. Temperature interval-I corresponds to the intrinsic regime, interval-II corresponds to saturation regime and interval-III corresponds to the freeze-out regime, respectively. Then

For the given operational amplifier circuit R₁ = 120 Ω, R₂ = 1.5 k and V_s = 0.6 V, then the output current I₀ is ____mA.

the given operational amplifier circuit R1=120Ω, R2=1.5k

The figure shows a circuit containing two diodes $D_1$ and $D_2$ with threshold voltages $V_{TH}$ of 0.7 V and 0.3 V, respectively. Considering the simplified diode model, which assumes diode I–V characteristics as shown in the plot on the right, the current through the resistor $R$ is ......... µA.

In the transistor circuit given in the figure, the emitter-base junction has a voltage drop of 0.7 V. A collector-emitter voltage of 14 V reverse biases the collector. Assuming the collector current to be the same as the emitter current, the value of $R_B$ is ........... k$\Omega$.

For an unbiased Silicon $n\text{-}p\text{-}n$ transistor in thermal equilibrium, which one of the following electronic energy band diagrams is correct? ($E_c$ = conduction band minimum, $E_v$ = valence band maximum, $E_F$ = Fermi level.)

For a metal, electron density is $6.4\times10^{28}\ \mathrm{m}^{-3}$. The Fermi energy is ................. eV. (Specify answer up to one digit after the decimal point.)

In a pn junction, dopant concentration on p-side is higher than n-side. Which statements are correct when the junction is unbiased?

Which of the combinations of crystal structure and coordination number is correct?