The donor concentration in a sample of n-type silicon is increased by a factor of 100. Assuming the sample to be non-degenerate, the shift in the Fermi level (in meV) at 300 K (rounded off to the nearest integer) is \(\underline{\hspace{2cm}}\).
\text{(Given: } k_B T = 25 \, \text{meV at 300 K).}