List of top Analog and Digital Electronics Questions on MOSFET: Characteristics and applications asked in GATE BM

A standard n-type MOSFET, biased in the saturation region, has the following parasitic capacitances:
1. \(C_{GS}\): gate to source capacitance
2. \(C_{GD}\): gate to drain capacitance
3. \(C_{DS}\): drain to source capacitance
Which one of the following options is correct?

In the circuit diagram shown below, the MOSFET is biased in the saturation region. The MOSFET has a threshold voltage \(V_{th} = 0.5 \, V\), width \(W = 100 \, \mu m\), length \(L = 0.1 \, \mu m\), and \(\mu_n C_{ox} = 100 \, \mu A.V^{-2}\). Assuming \(v_i = 1 \, mV\) as a small-signal input to MOSFET, the magnitude of the output voltage \(V_o\) is ______ mV (accurate to two decimal places). Ignore channel-length modulation for the MOSFET.}

In the circuit diagram shown below, NMOS is in saturation region, \( \mu_n C_{\text{ox}} = 200 \, \mu \text{A/V}^2 \), width \( W = 40 \, \mu \text{m} \), length \( L = 1 \, \mu \text{m} \), the threshold voltage is 0.4 V, and the ratio of body-effect transconductance (\( g_m b \)) to transconductance (\( g_m \)) is 0.1. A small input voltage \( v_{\text{in}} \) is applied at the bulk-terminal to produce a small change in the output voltage \( v_{\text{out}} \). The dc gain for \( v_{\text{out}} / v_{\text{in}} \) is \(\underline{\hspace{2cm}}\). (Neglect channel-length modulation for NMOS and all intrinsic capacitors.)