List of top Physics Questions on Semiconductor electronics: materials, devices and simple circuits asked in DUET

In a reverse-biased $p-n$ function, When the applied bias voltage is equal to the breakdown voltage, then

Band gap of silicon is E$_g$ (Si) of germanium is E$_g$ (Ge) and of carbon is E$_g$ (C). The correct order of band gap is

Zener diode acts as

Graph of input characteristic of common emitter amplifier is

$8$ bits form

The probability of electrons to be found in the conduction band of an intrinsic semiconductor at a finite temperature :

In germanium crystal, the. forbidden energy gap in joule is :

The current gain of a transistor in common emitter mode is $49$. The change in collector current and emitter current corresponding to the change in base current by $5.0 \,\mu A, $ will be