List of top Electronics Engineering Questions on Semiconductor asked in CUET (PG)

Due to illumination by light, the electron and hole concentrations in a heavily doped N-type semiconductor increase by \(\Delta n\) and \(\Delta p\), respectively. If \(n_i\) is the intrinsic concentration, then
Under high electric fields, in a semiconductor with an increasing electric field,

At room temperature, the energy band gap of different materials have been listed in the table below. Correctly match the energy band gap (List-I) with the corresponding material (List-II). 

LIST-I (Energy band gap)  LIST-II (Material)
A. \( E_g = 0.67 \) eVI. Polymer
B. \( E_g = 1.1 \) eVII. Germanium
C. \( E_g = 1.43 \) eVIII. Silicon
D. \( E_g > 5 \) eVIV. Gallium Arsenide
In a p-type Si sample, the hole concentration is \(2.25 \times 10^{15} \text{ cm}^{-3}\) and the intrinsic carrier concentration is \(1.5 \times 10^{10} \text{ cm}^{-3}\). The value of electron concentration will be